This memory module itself will be mass produced in mid 2010. With 40 nanometer production technology, the chip 4 gigabit (GB) which was introduced earlier this year Samsung will complete the module.
"LRDIMM new 32 GB will accommodate the next generation of servers that are designed for virtual, cloud computing and other applications with higher capacity," said Ding Soo Jun, Executive Vice President, Memory Marketing Samsung Electronics Semiconductor Business, in his statement yesterday.
"By developing technology-reduced load module with 40 nm DDR3-classes, we emphasize our goal of combining the capacity and best performance for the latest generation servers," he said.
Samsung's prototype consists of 72 LRDIMM 32GB 4Gb DDR3 chip and memory chips in addition to helping reduce the burden of memory sub-system as much as 75 percent. "By using LRDIMM 32GB, memory capacity can be increased up to 384GB per CPU. In a two-way server systems, capacity can be increased to 768GB, or about 1.5 times with a 512GB server systems equipped with 32GB of DDR3 RDIMM," he explained.
Servers equipped with LRDIMM can process data at speeds 1333 megabit per second (Mbps), about 70 percent faster than the previous speed 800Mbps
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